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  • A model for multilevel phase-change memories incorporating resistance drift effects 

    Cobley, RA; Wright, C. David; Vazquez Diosdado, JA (Institute of Electrical and Electronics Engineers (IEEE), 2014-09-12)
    Phase change memories are emerging as a most promising technology for future nonvolatile, solid-state, electrical storage. However, to compete effectively in mainstream storage applications, a multilevel cell capability ...