A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

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A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

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dc.contributor.author Senkader, Semih en_GB
dc.contributor.author Aziz, Mustafa M. en_GB
dc.contributor.author Wright, C. David en_GB
dc.contributor.department University of Exeter en_GB
dc.date.accessioned 2009-01-13T13:11:42Z en_GB
dc.date.accessioned 2011-01-25T10:32:40Z en_US
dc.date.accessioned 2013-03-20T12:17:58Z
dc.date.issued 2003 en_GB
dc.description.abstract We have developed a model to simulate the phase-change behavior of GeSbTe thin film alloys. Based on classical nucleation theory we described formation of crystalline clusters using chemical rate equations. Assuming that the phase-change proceeds by interactions of single GeSbTe molecules with growing or decaying crystalline clusters we used a set of differential equations to account for the population density changes of clusters. We defined reaction rates encountered in model equations by considering possible molecular processes during the phase-change process. To validate the model we simulated experiments taken from the literature. It can predict the kinetics of crystallization well, describe transient effectis correctly, and consider influecnes of substrates on crystallization successfully. en_GB
dc.identifier.citation Vol. 5069, pp. 98-104 en_GB
dc.identifier.doi 10.1117/12.532526 en_GB
dc.identifier.uri http://hdl.handle.net/10036/47334 en_GB
dc.language.iso en en_GB
dc.publisher SPIE en_GB
dc.relation.url http://dx.doi.org/10.1117/12.532526 en_GB
dc.subject GeSbTe en_GB
dc.subject phase-change en_GB
dc.subject crystallisation en_GB
dc.title A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage en_GB
dc.type Article en_GB
dc.date.available 2009-01-13T13:11:42Z en_GB
dc.date.available 2011-01-25T10:32:40Z en_US
dc.date.available 2013-03-20T12:17:58Z
dc.identifier.issn 0277-786X en_GB
dc.description Copyright © 2003 Society of Photo-Optical Instrumentation Engineers. This paper was published in Proceedings of SPIE Volume 5069, pp. 98-104 and is made available with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. en_GB
dc.identifier.journal Proceedings of SPIE en_GB


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