Now showing items 1-20 of 28

  • Beyond von-Neumann computing with nanoscale phase-change memory devices 

    Wright, CD; Hosseini, P; Vazquez-Diosdado, JA (Wiley, 2013-05-13)
    Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently however the potential has been demonstrated for using phase-change devices as the ...
  • Can conventional phase-change memory devices be scaled down to single-nanometre dimensions? 

    Hayat, H; Kohary, KI; Wright, CD (IOP Publishing: Hybrid Open Access, 2016-12-09)
    The scaling potential of “mushroom-type” phase-change memory devices is evaluated, down to singlenanometre dimensions, using physically realistic simulations that combine electro-thermal modelling with a Gillespie Cellular ...
  • Crystal-clear neuronal computing 

    Wright, CD (Nature Publishing Group, 2016-05-16)
    Induced progressive crystallization in chalcogenide-based materials can be used to closely mimic neuronal functions, opening new paths to neuromorphic computing.
  • The design of practicable phase-change metadevices for near-infrared absorber and modulator applications 

    Santiago García-Cuevas Carrillo; Geoffrey R. Nash; Hayat, HH; Martin J. Cryan; Maciej Klemm; Harish Bhaskaran; Wright, CD (Optical Society of America, 2015)
    Phase-change chalcogenide alloys, such as Ge2Sb2Te5 (GST), have very different optical properties in their amorphous and crystalline phases. The fact that such alloys can be switched, optically or electrically, between ...
  • Development of an optoelectronic test station for novel phasechange device characterisation and development 

    Au, YY; Wright, CD (E\PCOS, 2016-09-04)
    Optoelectronic applications of phase-change devices are of increasing interest and importance. To enable the proper experimental characterisation of device optoelectronic properties, and to allow for the future development ...
  • Experimental verification of increased optical contrast in nanometer phase change films 

    Hosseini, P; Bhaskaran, H; Wright, CD (Institute of Electrical and Electronics Engineers (IEEE), 2015-07-28)
    The optoelectronic properties of phase change materials (PCMs) have been recently demonstrated for novel applications such as solid state nanodisplays. The thickness of the active PCM layer in particular is of critical ...
  • Fast High-Responsivity Few-Layer MoTe2 Photodetectors 

    Octon, Tobias J.; Nagareddy, K; Russo, SR; Craciun, MC; Wright, CD (Wiley, 2016-08-16)
    The Transition Metal Dichalcogenide MoTe2 is fabricated via mechanical exfoliation into few-layer Field Effect Transistors (FETs) having a hole mobility of 2.04 V/cm2/s. Four-layer MoTe2 FETs show a high photoresponsivity ...
  • Implantation temperature effects on the nanoscale optical pattern fabrication in a-SiC:H films by Ga+ focused ion beams 

    Tsvetkova, T; Wright, CD; Hosseini, P; Bischoff, L; Zuk, J (Polish Academy of Sciences, 2013-05)
    This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale ...
  • Integrated phase-change photonics for all-optical processing 

    Stegmaier, M; Fledmann, J; Rios, C; Wright, CD; Bhaskaran, H; Pernice, WHP (E\PCOS, 2016-09-04)
    Embedding phase-change materials (PCMs) in on-chip photonic circuitry enables nonvolatile alloptical operation of integrated optical devices. This hybrid system has been used so far in terms of memory applications. However, ...
  • Joule heating effects in nanoscale carbon-based memory devices 

    Bachmann, TA; Alexeev, AM; Koelmans, WW; Zipoli, F; Ott, AK; Dou, C; Ferrari, AC; Nagareddy, VK; Craciun, MF; Jonnalagadda, VP; Curioni, A; Sebastian, A; Eleftheriou, E; Wright, CD (Institute of Electrical and Electronics Engineers (IEEE), 2016-12-08)
    One of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers a very good scalability, ...
  • Mixed-Mode Electro-Optical Operation of Ge2Sb2Te5 Nanoscale Crossbar Devices 

    Rodriguez-Hernandez, G; Hosseini, P; Ríos, C; Wright, CD; Bhaskaran, H (Wiley, 2017-06-05)
    The use of phase-change materials for a range of exciting new optoelectronic applications from artificial retinas to ultrahigh-resolution displays requires a thorough understanding of how these materials perform under a ...
  • Multilevel ultrafast flexible nanoscale nonvolatile hybrid graphene oxide-titanium oxide memories 

    Nagareddy, VK; Barnes, MD; Zipoli, F; Lai, KT; Alexeev, AM; Craciun, MF; Wright, CD (American Chemical Society, 2017-02-27)
    Graphene oxide (GO) resistive memories offer the promise of low-cost environmentally sustainable fabrication, high mechanical flexibility and high optical transparency, making them ideally suited to future flexible and ...
  • Non-volatile Optoelectronic Phase-Change Meta-Displays 

    Garia-Ceuvas Carrillo, S; Wright, CD; Hosseini, P; Bhaskaran, H (metaconferences.org, 2016-07-25)
    Phase-change materials have a pronounced contrast between their electrical and optical properties when in the amorphous to crystalline phases, and can be switched between these phases quickly and repeatedly by electrical ...
  • Phase-change computing 

    Wright, CD; Hosseini, P (E\PCOS, 2012-07-08)
    Phase-change materials and devices are currently generating much interest for their potential to provide practicable alternatives to traditional von-Neumann computing (i.e. alternatives to computing in which memory and ...
  • Phase-change devices for simultaneous optical-electrical applications 

    Au, Y-Y; Bhaskaran, H; Wright, CD (Nature Publishing Group:, 2017-08-29)
    We present a viable pathway to the design and characterization of phase-change devices operating in a mixed-mode optical-electrical, or optoelectronic, manner. Such devices have potential applications ranging from novel ...
  • Phase-change meta-photonics 

    Wright, CD; Ruiz de Galarreta, C; Trimby, L; Garcia-Cuevas Carrillo, S; Bertolotti, J; Hewak, DW; Cryan, M; Klemm, M; Hosseini, P; Bhaskaran, H (E\PCOS, 2016-09)
    We combine phase-change materials and metamaterial arrays (metasurfaces) to create new forms of dynamic, tuneable and reconfigurable photonic devices including ‘perfect’ absorbers, infra-red light modulators, optical beam ...
  • Photoconductivity of Few-Layer MoTe2 

    Octon, TJ; Nagareddy, VK; Craciun, MF; Wright, CD (metaconferences.org, 2016-07-25)
    A photoconductivity study of few-layer MoTe2 in a field effect transistor (FET) configuration was performed to find the photoresponsivity and photocurrent response of the material. The mechanisms for MoTe2 with no applied ...
  • Reconfigurable nanophotonic devices using phase-change materials 

    Stegmaier, M; Rios, C; Wright, CD; Bhaskaran, H; Pernice, WHP (E\PCOS, 2016-09-04)
    Nanophotonic integrated circuits enable realizing functional optical devices using efficient design and fabrication routines. Their inherent stability and scalability makes them attractive for applications where optical ...