Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes

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Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes

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dc.contributor.author Wright, C. David en_GB
dc.contributor.author Armand, Marilyn en_GB
dc.contributor.author Aziz, Mustafa M. en_GB
dc.contributor.department University of Exeter en_GB
dc.date.accessioned 2008-12-23T10:05:00Z en_GB
dc.date.accessioned 2011-01-25T10:32:40Z en_US
dc.date.accessioned 2013-03-20T12:17:53Z
dc.date.issued 2006 en_GB
dc.description.abstract A theoretical study of the write, read, and erase processes in electrical scanning probe storage on phase-change media is presented. Electrical, thermal, and phase-transformation mechanisms are considered to produce a physically realistic description of this new approach to ultrahigh-density data storage. Models developed are applied to the design of a suitable storage layer stack with the necessary electrical, thermal, and tribological properties to support recorded bits of nanometric scale. The detailed structure of nanoscale crystalline and amorphous bits is also predicted. For an optimized trilayer stack comprising Ge2Sb2Te5 sandwiched by amorphous or diamond-like carbon layers, crystalline bits were roughly trapezoidal in shape while amorphous bits were semi-ellipsoidal. In both cases, the energy required to write individual bits was very low (of the order of a few hundred picoJoules). Amorphous marks could be directly overwritten (erased), but crystalline bits could not. Readout performance was investigated by calculating the readout current as the tip scanned over isolated bits and bit patterns of increasing density. The highest readout contrast was generated by isolated crystalline bits in an amorphous matrix, but the narrowest readout pulses arose from isolated amorphous marks in a crystalline background. To assess the ultimate density capability of electrical probe recording the role of write-induced intersymbol interference and the thermodynamic stability of nanoscale marks were also studied. en_GB
dc.identifier.citation 5 (1), pp. 50-61 en_GB
dc.identifier.doi 10.1109/TNANO.2005.861400 en_GB
dc.identifier.uri http://hdl.handle.net/10036/46899 en_GB
dc.language.iso en en_GB
dc.publisher IEEE en_GB
dc.relation.url http://dx.doi.org/10.1109/TNANO.2005.861400 en_GB
dc.relation.url http://ieeexplore.ieee.org/search/wrapper.jsp?arnumber=1576737 en_GB
dc.subject amorphisation en_GB
dc.subject antimony alloys en_GB
dc.subject crystal structure en_GB
dc.subject germanium alloys en_GB
dc.subject memory architecture en_GB
dc.subject nanostructured materials en_GB
dc.subject phase change materials en_GB
dc.subject phase transformations en_GB
dc.subject tellurium alloys en_GB
dc.subject thermodynamics en_GB
dc.subject electrical nanoprobes en_GB
dc.subject GeSbTe films en_GB
dc.subject phase-change films en_GB
dc.subject phase-change recording en_GB
dc.subject scanning probe data storage en_GB
dc.title Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes en_GB
dc.type Article en_GB
dc.date.available 2008-12-23T10:05:00Z en_GB
dc.date.available 2011-01-25T10:32:40Z en_US
dc.date.available 2013-03-20T12:17:53Z
dc.identifier.issn 1536-125X en_GB
dc.description ©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. en_GB
dc.identifier.journal IEEE Transactions on Nanotechnology en_GB


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