O-band N-rich silicon nitride MZI based on GST
Faneca, J; Bucio, TD; Gardes, FY; et al.Baldycheva, A
Date: 6 March 2020
Journal
Applied Physics Letters
Publisher
AIP Publishing
Publisher DOI
Abstract
We have experimentally demonstrated an O-band Mach-Zehnder interferometer (MZI) based on a N-rich silicon nitride
platform combined with Ge2Sb2Te5 for future optical communication applications. The device operation relies on
controlling the waveguide’s losses using a phase change material cell which can be changed from amorphous ...
We have experimentally demonstrated an O-band Mach-Zehnder interferometer (MZI) based on a N-rich silicon nitride
platform combined with Ge2Sb2Te5 for future optical communication applications. The device operation relies on
controlling the waveguide’s losses using a phase change material cell which can be changed from amorphous (lowloss) to crystalline (high-loss). An extinction ratio (ER) as high as 11 dB was obtained between the amorphous (ON)
and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell
unit length was measured to be as high as 0.87 dB/µm in OFF state and as low as 0.064 dB/µm in ON state for TM
polarisation.
Engineering
Faculty of Environment, Science and Economy
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