Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers
dc.contributor.author | Molas, MR | |
dc.contributor.author | Tyurnina, A | |
dc.contributor.author | Zolyomi, V | |
dc.contributor.author | Ott, A | |
dc.contributor.author | Terry, DJ | |
dc.contributor.author | Hamer, M | |
dc.contributor.author | Yegel, C | |
dc.contributor.author | Babiński, A | |
dc.contributor.author | Nasibulin, AG | |
dc.contributor.author | Ferrari, AC | |
dc.contributor.author | Fal’ko, V | |
dc.contributor.author | Gorbachev, R | |
dc.date.accessioned | 2020-03-26T13:52:36Z | |
dc.date.issued | 2020-03-16 | |
dc.description.abstract | III-VI post-transition metal chalcogenides (InSe and GaSe) are a new class of layered semiconductors, which feature a strong variation of size and type of their band gaps as a function of number of layers (N). Here, we investigate exfoliated layers of InSe and GaSe ranging from bulk crystals down to monolayer, encapsulated in hexagonal boron nitride, using Raman spectroscopy. We present the N-dependence of both intralayer vibrations within each atomic layer, as well as of the interlayer shear and layer breathing modes. A linear chain model can be used to describe the evolution of the peak positions as a function of N, consistent with first principles calculations | en_GB |
dc.description.sponsorship | National Science Centre, Poland | en_GB |
dc.description.sponsorship | Engineering and Physical Sciences Research Council (EPSRC) | en_GB |
dc.description.sponsorship | Scientific and Technological Research Council of Turkey (TUBITAK) | en_GB |
dc.description.sponsorship | Royal Society | en_GB |
dc.description.sponsorship | Samsung Advanced Institute of Technology (SAIT) | en_GB |
dc.description.sponsorship | European Research Council (ERC) | en_GB |
dc.identifier.citation | Published online 16 March 2020 | en_GB |
dc.identifier.doi | 10.1039/d0fd00007h | |
dc.identifier.grantnumber | 2017/24/C/ST3/00119 | en_GB |
dc.identifier.grantnumber | 2017/27/B/ST3/00205 | en_GB |
dc.identifier.grantnumber | e547 | en_GB |
dc.identifier.grantnumber | BIDEB-2219 programme (2018-1) | en_GB |
dc.identifier.grantnumber | Hetero2D | en_GB |
dc.identifier.grantnumber | EP/K01711X/1 | en_GB |
dc.identifier.grantnumber | EP/K017144/1 | en_GB |
dc.identifier.grantnumber | EP/N010345/1 | en_GB |
dc.identifier.grantnumber | EP/L016057/1 | en_GB |
dc.identifier.uri | http://hdl.handle.net/10871/120410 | |
dc.language.iso | en | en_GB |
dc.publisher | Royal Society of Chemistry | en_GB |
dc.rights | © The Royal Society of Chemistry. Open Access Article. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence: https://creativecommons.org/licenses/by/3.0/ | en_GB |
dc.title | Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2020-03-26T13:52:36Z | |
dc.identifier.issn | 1359-6640 | |
dc.description | This is the author accepted manuscript. The final version is available on open access from the Royal Society of Chemistry via the DOI in this record | en_GB |
dc.identifier.journal | Faraday Discussions | en_GB |
dc.rights.uri | https://creativecommons.org/licenses/by/3.0/ | en_GB |
dcterms.dateAccepted | 2020-01-22 | |
rioxxterms.version | AM | en_GB |
rioxxterms.licenseref.startdate | 2020-03-16 | |
rioxxterms.type | Journal Article/Review | en_GB |
refterms.dateFCD | 2020-03-26T13:45:53Z | |
refterms.versionFCD | AM | |
refterms.dateFOA | 2020-03-26T13:52:43Z | |
refterms.panel | B | en_GB |
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Except where otherwise noted, this item's licence is described as © The Royal Society of Chemistry. Open Access Article. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence: https://creativecommons.org/licenses/by/3.0/