Photophysical Properties of Single Photon Emitters in Hexagonal Boron Nitride
Khatri, P
Date: 6 December 2021
Publisher
University of Exeter
Degree Title
PhD in Engineering
Abstract
The development of photonic based quantum technologies such as quantum encryption and quantum computing is mainly restrained by the quality of single photon emitter. Effects like phonon interaction, emission purity, stability and decoherence are the major issues. So far quantum dots are leading the race in terms of indistinguishability, ...
The development of photonic based quantum technologies such as quantum encryption and quantum computing is mainly restrained by the quality of single photon emitter. Effects like phonon interaction, emission purity, stability and decoherence are the major issues. So far quantum dots are leading the race in terms of indistinguishability, emission purity and stability but low collection efficiency and operation at cryogenic/low temperature are major roadblocks. Hexagonal-Boron Nitride (hBN) is a 2D material with stable single photon emission even at 800 °C. hBN is an emerging material, attracting interest from a wider research community but information about the identity of the emitting defects is very limited. The aim of this work is to use the experimental techniques to probe the emitter and comment on the possible origins of the emission.
Doctoral Theses
Doctoral College
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