Flexible Electronics Applications of Ge-Rich and Se-Substituted Phase-Change Materials in Nonvolatile Memories
dc.contributor.author | Pady, J | |
dc.contributor.author | Costa, J | |
dc.contributor.author | Ramsdale, C | |
dc.contributor.author | Alkhalil, F | |
dc.contributor.author | Nevill, A | |
dc.contributor.author | Craciun, MF | |
dc.contributor.author | Wright, CD | |
dc.date.accessioned | 2024-03-18T14:21:46Z | |
dc.date.issued | 2024-01-11 | |
dc.date.updated | 2024-03-18T11:52:27Z | |
dc.description.abstract | Flexible electronics which are easy to manufacture and integrate into everyday items require suitable memory technology that can function on flexible surfaces. Herein, the properties of Ge-rich GeSbTe (GST) and Se-substituted GeSbSeTe (GSST) phase-change alloys are investigated for application as nonvolatile write-once and rewritable memories in flexible electronics. These materials have a higher crystallization temperature than the archetypal composition of Ge2Sb2Te5 and hence better data retention properties. Moreover, their high crystallization temperature provides for a particularly straightforward implementation of a write-once memory configuration. Material properties of Ge-rich GST and GSST are measured as a function of temperature using four-point probe electrical testing, Raman spectroscopy, and X-ray diffraction. Following this, the switching of flexible memory devices is investigated through both simulation and experiment. More specifically, crossbar memory devices fabricated using Ge-rich GST are experimentally fabricated and tested, while the operation of GSST pore cell structures suitable for flexible memory applications is demonstrated through simulation. | en_GB |
dc.description.sponsorship | Engineering and Physical Sciences Research Council (EPSRC) | en_GB |
dc.description.sponsorship | PragmatIC Semiconductor Ltd | en_GB |
dc.identifier.citation | Article 2300425 | en_GB |
dc.identifier.doi | https://doi.org/10.1002/pssr.202300425 | |
dc.identifier.grantnumber | EP/L015331/1 | en_GB |
dc.identifier.uri | http://hdl.handle.net/10871/135576 | |
dc.identifier | ORCID: 0000-0003-4087-7467 (Wright, Christopher David) | |
dc.language.iso | en | en_GB |
dc.publisher | Wiley | en_GB |
dc.rights | © 2024 Wiley-VCH GmbH. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission | en_GB |
dc.title | Flexible Electronics Applications of Ge-Rich and Se-Substituted Phase-Change Materials in Nonvolatile Memories | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2024-03-18T14:21:46Z | |
dc.description | This is the author accepted manuscript. The final version is available from Wiley via the DOI in this record | en_GB |
dc.description | Data Availability Statement: The data that support the findings of this study are available from the corresponding author upon reasonable request. | en_GB |
dc.identifier.eissn | 1862-6270 | |
dc.identifier.journal | physica status solidi (RRL) - Rapid Research Letters | en_GB |
dc.relation.ispartof | Physics Status Solidi - Rapid Research Letterw | |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_GB |
dcterms.dateAccepted | 2024-01-11 | |
dcterms.dateSubmitted | 2023-11-10 | |
rioxxterms.version | AM | en_GB |
rioxxterms.licenseref.startdate | 2024-01-11 | |
rioxxterms.type | Journal Article/Review | en_GB |
refterms.dateFCD | 2024-03-18T11:52:29Z | |
refterms.versionFCD | AM | |
refterms.dateFOA | 2024-03-18T14:21:53Z | |
refterms.panel | B | en_GB |
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Except where otherwise noted, this item's licence is described as © 2024 Wiley-VCH GmbH. For the purpose of open access, the author has applied a Creative Commons Attribution (CC BY) licence to any Author Accepted Manuscript version arising from this submission