A three-step healing approach for high performance n-channel perovskite transistors and logical circuits
Bukke, RN; Syzgantseva, OA; Syzgantseva, MA; et al.Aidinis, K; Soultati, A; Verykios, A; Tountas, M; Psycharis, V; Alshahrani, T; Ullah, H; Zorba, LP; Vougioukalakis, GC; Nazeeruddin, MK; Vasilopoulou, M; Rashid bin Mohd Yusoff, A
Date: 2024
Article
Journal
Nature Electronics
Publisher
Nature Research
Abstract
Progress in all-inorganic tin halide perovskites has recently enabled the fabrication of p-channel transistors with mobilities exceeding 50 cm2 V-1 s-1. However, the performance of the n-channel counterparts is currently limited to 4 cm2 V-1 s-1, undermining efforts to realize all-perovskite logical circuits. Herein, we report n-channel ...
Progress in all-inorganic tin halide perovskites has recently enabled the fabrication of p-channel transistors with mobilities exceeding 50 cm2 V-1 s-1. However, the performance of the n-channel counterparts is currently limited to 4 cm2 V-1 s-1, undermining efforts to realize all-perovskite logical circuits. Herein, we report n-channel hysteresis-free perovskite transistors with electron mobilities of 25.15 cm2 V−1 s−1 combined with exceptional stability upon continuous bias stress. This is achieved through the application of a rational three-step healing approach, consisting of: (i) the addition of methyl ammonium chloride to stabilize the alpha-phase of formamidinium lead iodide; (ii) dilution with tetrahydrofuran to substantially improve the morphology of the perovskite channel; and (iii) surface treatment with tetramethylammonium hexafluorophosphate to further reduce the concentration of ionic bulk and surface defects. Upon applying a short post-annealing of the surface modifier, an unprecedented mobility of 33 cm2 V−1 s−1 is further attained. These transistors are integrated to fabricate unipolar inverters and eleven-stage ring oscillators, paving the path towards all-perovskite logical circuits.
Engineering
Faculty of Environment, Science and Economy
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