GeSbSeTe Phase-change Material for Write-once and Rewritable Flexible Non-volatile Memories

Abstract

The phase-change material Ge2Sb2Se4Te1 (GSST) is investigated for use in flexible non-volatile memory applications. Modified pore cell structures on polyimide substrates are fabricated using this material and their switching properties explored experimentally and via simulation. A straightforward route to the development of a write-once memory, involving a one-way switch from the amorphous to the crystalline phase, is first demonstrated. Subsequently, it is shown that GSST can support re-amorphisation in the modified pore cell structure, even with the relatively long duration pulses used in low-cost flexible systems, so demonstrating a fully rewritable flexible phasechange memory.