Thermal emission from large area chemical vapor deposited graphene devices
Luxmoore, Isaac John
Nash, Geoffrey R.
Applied Physics Letters
American Institute of Physics (AIP)
The spatial variation of thermal emission from large area graphene grown by chemical vapor deposition, transferred onto SiO2/Si substrates and fabricated into field effect transistor structures, has been investigated using infra-red microscopy. A peak in thermal emission occurs, the position of which can be altered by reversal of the current direction. The experimental results are compared with a one dimensional finite element model, which accounts for Joule heating and electrostatic effects, and it is found that the thermal emission is governed by the charge distribution in the graphene and maximum Joule heating occurs at the point of minimum charge density.
This research was supported by the Engineering and Physical Sciences Research Council, and the European Union under the FET-open grant GOSFEL
Engineering and Physical Sciences Research Council (EPSRC)
Copyright © 2013 AIP Publishing
Vol. 103 (13), article 131906