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dc.contributor.authorShioya, Hiroki
dc.contributor.authorCraciun, Monica F.
dc.contributor.authorRusso, Saverio
dc.contributor.authorYamamoto, Michihisa
dc.contributor.authorTarucha, Seigo
dc.date.accessioned2014-10-31T15:09:33Z
dc.date.issued2014-03-12
dc.description.abstractTheoretical works suggest the possibility and usefulness of strain engineering of graphene by predicting remarkable properties, such as Dirac cone merging, bandgap opening and pseudo magnetic field generation. However, most of these predictions have not yet been confirmed because it is experimentally difficult to control the magnitude and type (e.g., uniaxial, biaxial, and so forth) of strain in graphene devices. Here we report two novel methods to apply strain without bending the substrate. We employ thin films of evaporated metal and organic insulator deposited on graphene, which shrink after electron beam irradiation or heat application. These methods make it possible to apply both biaxial strain and in-plane isotropic compressive strain in a well-controlled manner. Raman spectroscopy measurements show a clear splitting of the degenerate states of the G-band in the case of biaxial strain, and G-band blue shift without splitting in the case of in-plane isotropic compressive strain. In the case of biaxial strain application, we find out the ratio of the strain component perpendicular to the stretching direction is at least three times larger than what was previously observed, indicating that shrinkage of the metal or organic insulator deposited on graphene induces both tensile and compressive strain in this atomically thin material. Our studies present for the first time a viable way to apply strain to graphene without the need to bend the substrate.en_GB
dc.description.sponsorshipGCOE for Phys. Sci. Frontieren_GB
dc.description.sponsorshipProject for Developing Innovation Systems, MEXT, Japanen_GB
dc.description.sponsorshipGrant-in-Aid for Young Scientists Aen_GB
dc.description.sponsorshipMEXT KAKENHI “Science of Atomic Layers”en_GB
dc.description.sponsorshipJST Strategic International Cooperative Programs (DFG-JST and EPSRC-JST)en_GB
dc.identifier.citationVol. 14, Issue 3, pp. 1158-1163en_GB
dc.identifier.doi10.1021/nl403679f
dc.identifier.grantnumber23684019en_GB
dc.identifier.urihttp://hdl.handle.net/10871/15780
dc.language.isoenen_GB
dc.publisherAmerican Chemical Societyen_GB
dc.relation.urlhttp://www.ncbi.nlm.nih.gov/pubmed/24490629en_GB
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/nl403679fen_GB
dc.rightsTerms of Use CC-BY: http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.htmlen_GB
dc.subjectgrapheneen_GB
dc.subjectplanar processen_GB
dc.subjectthin filmsen_GB
dc.subjectshrinkage of thin filmsen_GB
dc.subjecttensile and compressive strainen_GB
dc.subjectRaman spectrumen_GB
dc.subjectstrain engineering of two-dimensional crystalsen_GB
dc.titleStraining graphene using thin film shrinkage methods.en_GB
dc.typeArticleen_GB
dc.date.available2014-10-31T15:09:33Z
dc.identifier.issn1530-6984
exeter.place-of-publicationUnited States
dc.descriptiontypes: Journal Article; Research Support, Non-U.S. Gov'ten_GB
dc.descriptionThis is an open access article that is freely available in ORE or from the publisher's web site. Please cite the published version.en_GB
dc.identifier.eissn1530-6992
dc.identifier.journalNano Lettersen_GB


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