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dc.contributor.authorHosseini, Peiman
dc.contributor.authorSebastian, A.
dc.contributor.authorPapandreou, N.
dc.contributor.authorWright, C. David
dc.contributor.authorBhaskaran, Harish
dc.date.accessioned2015-11-04T15:14:33Z
dc.date.issued2015-07-15
dc.description.abstractPhase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations.en_GB
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC)en_GB
dc.identifier.citationVol. 36 (9), pp. 975 - 977en_GB
dc.identifier.doi10.1109/LED.2015.2457243
dc.identifier.grantnumberEP/J018783/1en_GB
dc.identifier.urihttp://hdl.handle.net/10871/18581
dc.language.isoenen_GB
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_GB
dc.subjectfield effect transistorsen_GB
dc.subjectphase change materialsen_GB
dc.subjectphase change memoriesen_GB
dc.subjectPerformance evaluationen_GB
dc.subjectPhase change memoryen_GB
dc.subjectReliabilityen_GB
dc.subjectResistanceen_GB
dc.subjectSwitchesen_GB
dc.subjectFET access devicesen_GB
dc.subjectaccumulation-based computingen_GB
dc.subjectaccumulative propertyen_GB
dc.subjectnon-von Neumann arithmetic processingen_GB
dc.subjectparallelized computationsen_GB
dc.titleAccumulation-based computing using phasechange memories with FET access devicesen_GB
dc.typeArticleen_GB
dc.date.available2015-11-04T15:14:33Z
dc.identifier.issn0741-3106
pubs.declined2016-03-03T16:00:48.919+0000
pubs.declined2016-03-12T10:00:57.925+0000
pubs.declined2016-03-16T06:01:09.205+0000
pubs.declined2016-03-28T04:09:16.601+0100
pubs.declined2016-04-28T18:00:54.515+0100
pubs.declined2016-05-05T22:03:45.88+0100
pubs.declined2016-05-22T14:00:30.495+0100
pubs.declined2016-05-23T16:01:14.119+0100
pubs.declined2016-06-18T10:02:39.560+0100
dc.descriptionCopyright © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en_GB
dc.identifier.journalIEEE Electron Device Lettersen_GB


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