dc.contributor.author | Hosseini, Peiman | |
dc.contributor.author | Sebastian, A. | |
dc.contributor.author | Papandreou, N. | |
dc.contributor.author | Wright, C. David | |
dc.contributor.author | Bhaskaran, Harish | |
dc.date.accessioned | 2015-11-04T15:14:33Z | |
dc.date.issued | 2015-07-15 | |
dc.description.abstract | Phase-change materials and devices have received much attention as a potential route to the realization of various types of unconventional computing paradigms. In this letter, we present non-von Neumann arithmetic processing that exploits the accumulative property of phase-change memory (PCM) cells. Using PCM cells with integrated FET access devices, we perform a detailed study of accumulation-based computation. We also demonstrate efficient factorization using PCM cells, a technique that could pave the way for massively parallelized computations. | en_GB |
dc.description.sponsorship | Engineering and Physical Sciences Research Council (EPSRC) | en_GB |
dc.identifier.citation | Vol. 36 (9), pp. 975 - 977 | en_GB |
dc.identifier.doi | 10.1109/LED.2015.2457243 | |
dc.identifier.grantnumber | EP/J018783/1 | en_GB |
dc.identifier.uri | http://hdl.handle.net/10871/18581 | |
dc.language.iso | en | en_GB |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_GB |
dc.subject | field effect transistors | en_GB |
dc.subject | phase change materials | en_GB |
dc.subject | phase change memories | en_GB |
dc.subject | Performance evaluation | en_GB |
dc.subject | Phase change memory | en_GB |
dc.subject | Reliability | en_GB |
dc.subject | Resistance | en_GB |
dc.subject | Switches | en_GB |
dc.subject | FET access devices | en_GB |
dc.subject | accumulation-based computing | en_GB |
dc.subject | accumulative property | en_GB |
dc.subject | non-von Neumann arithmetic processing | en_GB |
dc.subject | parallelized computations | en_GB |
dc.title | Accumulation-based computing using phasechange memories with FET access devices | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2015-11-04T15:14:33Z | |
dc.identifier.issn | 0741-3106 | |
pubs.declined | 2016-03-03T16:00:48.919+0000 | |
pubs.declined | 2016-03-12T10:00:57.925+0000 | |
pubs.declined | 2016-03-16T06:01:09.205+0000 | |
pubs.declined | 2016-03-28T04:09:16.601+0100 | |
pubs.declined | 2016-04-28T18:00:54.515+0100 | |
pubs.declined | 2016-05-05T22:03:45.88+0100 | |
pubs.declined | 2016-05-22T14:00:30.495+0100 | |
pubs.declined | 2016-05-23T16:01:14.119+0100 | |
pubs.declined | 2016-06-18T10:02:39.560+0100 | |
dc.description | Copyright © 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | en_GB |
dc.identifier.journal | IEEE Electron Device Letters | en_GB |