Electron States of Uniaxially Strained Graphene
Craciun, Monica F.
American Chemical Society
Copyright © 2015 American Chemical Society. This is an open access article published under a Creative Commons Attribution (CC-BY) License, which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
We report an experimental study of electron states and the resulting electronic transport properties of uniaxially strained graphene. For this study we developed a novel strain application method that is compatible with the planar device technology. We identify the value of the strain induced in graphene by Raman spectroscopy and show with atomic force microscopy that its topography consists of wrinkles up to 4 nm height aligned along the direction of the applied strain. Transport experiments reveal a broadening of the charge neutrality region and the convergence of Landau levels to multiple Dirac points in Landau-fan diagrams. These observations are consistent with large fluctuations of the scalar potential via the strain-induced wrinkles, which is experimentally observed for the first time.
GCOE for Phys. Sci. Frontier
Project for Developing Innovation Systems, MEXT, Japan
Engineering and Physical Sciences Research Council (EPSRC)
Royal Society international Exchanges Scheme
JST Strategic International Cooperative Programs
Grants-in-Aid for Scientific Research S
This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Nanoletters, copyright © American Chemical Society after peer review. This is an open access article. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b03027.
Available online November 30, 2015.