Tunable Nanophotonic circuits based on phase change materials

dc.contributor.author	Rios, Carlos
dc.contributor.author	Hosseini, Peiman
dc.contributor.author	Wright, C. David
dc.contributor.author	Bhaskaran, Harish
dc.contributor.author	Pernice, Wolfram H.P.
dc.date.accessioned	2016-03-01T15:05:58Z
dc.date.issued	2013
dc.description.abstract	We present preliminary results of the characterization of the optical response of GeSbTe (GST) thin-films integrated with SiN nanophotonic circuits at telecom wavelengths. Transmission measurements are carried out GST thin-films of varying width deposited on top of ring resonators. The nanophotonics circuits are fabricated and optimized in order to find the best response when GST is placed atop the waveguiding layer. Our results for the absorption/transmission properties at different phase states of GST thin-films paves the way towards a all-photonic non-volatile memories.	en_GB
dc.identifier.uri	http://hdl.handle.net/10871/20341
dc.language.iso	en	en_GB
dc.publisher	The authors	en_GB
dc.title	Tunable Nanophotonic circuits based on phase change materials	en_GB
dc.type	Conference paper	en_GB
dc.date.available	2016-03-01T15:05:58Z
dc.description	Paper presented at European\Phase Change and Ovonics Symposium, 2013-09-08, 2013-09-10, Berlin	en_GB
dc.identifier.journal	E\PCOS Proceedings 2013	en_GB