Beyond von-Neumann computing with nanoscale phase-change memory devices
Wright, CD; Hosseini, P; Vazquez-Diosdado, JA
Date: 13 May 2013
Article
Journal
Advanced Functional Materials
Publisher
Wiley
Publisher DOI
Abstract
Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently however the potential has been demonstrated for using phase-change devices as the basis for new forms of brain-like computing, by exploiting their multi-level resistance capability to provide electronic ...
Historically, the application of phase-change materials and devices has been limited to the provision of non-volatile memories. Recently however the potential has been demonstrated for using phase-change devices as the basis for new forms of brain-like computing, by exploiting their multi-level resistance capability to provide electronic mimics of biological synapses. Here we exploit a different and previously under-explored property also intrinsic to phase-change materials and devices, namely accumulation, to demonstrate that nanoscale electronic phase-change devices can also provide a powerful form of arithmetic computing. We carry out complicated arithmetic operations, including parallel factorization and fractional division, using simple nanoscale phase-change cells that process and store data simultaneously and at the same physical location, promising a most efficient and effective means for implementing 'beyond von-Neumann' computing. We also show that this same accumulation property can be used to provide a particularly simple form phase-change integrate-and-fire 'neuron' which, by combining both phase-change synapse and neuron electronic mimics, potentially opens up a route to the realization of all-phase-change neuromorphic processing.
Engineering
Faculty of Environment, Science and Economy
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