Implantation temperature effects on the nanoscale optical pattern fabrication in a-SiC:H films by Ga+ focused ion beams
Acta Physica Polonica A
Polish Academy of Sciences
This is the final version of the article. Reproduced with permission, and available from Polish Academy of Sciences via the DOI in this record.
This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H samples, Ga+ focused ion beam implanted, have been prepared. A range of samples has been focused ion beam patterned under different implantation conditions, with emphasis on different substrate temperatures (typically from 0°C temperature to around room temperature). Some of the room temperature implanted samples were further annealed at + 250°C in vacuum. The focused ion beam patterned samples were then analysed using near-field techniques, like atomic force microscopy, to define optimum implantation conditions and the resulting consequences for archival data storage applications. The atomic force microscopy analysis of Ga+ focused ion beam implanted a-Si1 - xCx:H samples at room temperature and at 0°C revealed an increase of both the depth and the width of the individual lines within the focused ion beam written patterns at the lower temperature, as a result of an increased ion beam induced sputtering yield, in good agreement with the previous results for the case of Ga+ broad beam implantation in a-Si1-xCx:H and again suggesting that the best conditions for optical data storage for archival storage applications would be using Ga+ ion implantation in a-SiC:H films with an optimal dose at room temperatures. Similarly, the atomic force microscopy results confirm that no advantage is expected to result from post-implantation annealing treatments.
This work has been supported by the European Community as an Integrating Activity “Support of Public and Industrial Research using Ion Beam Technology (SPIRIT)” under EC contract No. 227012. The support of EC funded project BG051PO001/3.3.-05.001 for this publication is gratefully acknowledged. The Marie Curie Fellowship for T. Tsvetkova was also supported by the European Community under the contract PIEF-GA-2009-251845. The help of D. Dimova-Malinovska and O. Angelov with the samples preparation and useful discussions is also gratefully acknowledged.
Proceedings of the IX International Conference on Ion Implantation and Other Applications of Ions and Electrons ION 2012, Kazimierz Dolny, Poland, June 25-28, 2012
Vol. 123, No. 5, pp. 952-955