Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, new features in consumer electronics, safety devices and medical equipment. ...
Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. They can be the key to improving bandwidths in telecommunications, capacity in data storage, new features in consumer electronics, safety devices and medical equipment. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up with full control over the polarization and wavelength of light. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution is equivalent to commercially available instruments with the significant added value of being a compact, multi-purpose unit. Our design offers a versatile solution to face the challenges imposed by the advent of atomically-thin materials in optoelectronic devices.
