Can conventional phase-change memory devices be scaled down to single-nanometre dimensions?
Hayat, H; Kohary, KI; Wright, CD
Date: 9 December 2016
Journal
Nanotechnology
Publisher
IOP Publishing: Hybrid Open Access
Publisher DOI
Abstract
The scaling potential of “mushroom-type” phase-change memory devices is evaluated, down to singlenanometre
dimensions, using physically realistic simulations that combine electro-thermal modelling with
a Gillespie Cellular Automata phase-transformation approach. We found that cells with heater contact sizes
as small as 6 nm could ...
The scaling potential of “mushroom-type” phase-change memory devices is evaluated, down to singlenanometre
dimensions, using physically realistic simulations that combine electro-thermal modelling with
a Gillespie Cellular Automata phase-transformation approach. We found that cells with heater contact sizes
as small as 6 nm could be successfully amorphized and re-crystallized (RESET and SET) using moderate
excitation voltages. However, to enable the efficient formation of amorphous domes during RESET in small
cells (heater contact diameters of 10 nm or less), it was necessary to improve the thermal confinement of
the cell to reduce heat loss via the electrodes. The resistance window between the SET and RESET states
decreased as the cell size reduced, but it was still more than an order of magnitude even for the smallest
cells. As expected, the RESET current reduced as the cells got smaller; indeed, RESET current scaled with
the inverse of the heater contact diameter and ultra-small RESET currents of only 19 μA were achieved for
the smallest cells. Our results show that the conventional mushroom-type phase-change cell architecture is
scalable and operable in the sub-10nm region.
Engineering
Faculty of Environment, Science and Economy
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