Temperature Evolution in Nanoscale Carbon-Based Memory Devices due to Local Joule Heating
IEEE Transactions on Nanotechnology
Institute of Electrical and Electronics Engineers (IEEE)
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Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp2 and sp3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behaviour at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.
The authors thank all collaborators and colleagues involved in this project, in particular from IBM Zurich: M. Le Gallo and U. Egger for their help with the electrical setup, and C. P. Rossell for fruitful discussions. We thank M. M. Aziz from the University of Exeter for fruitful discussions. This work was funded by the EU research & innovation project CareRAMM, no. 309980.
This is the author accepted manuscript. The final version is available from Institute of Electrical and Electronics Engineers (IEEE) via the DOI in this record.
Date of Publication: 23 February 2017