Temperature Evolution in Nanoscale Carbon-Based Memory Devices due to Local Joule Heating
Bachmann, T; Alexeev, A; Koelmans, W; et al.Zipoli, F; Ott, A; Duo, C; Ferrari, A; Nagareddy, VK; Craciun, M; Jonnalagadda, P; Curioni, A; Sebastian, A; Eleftheriou, E; Wright, CD
Date: 23 February 2017
Journal
IEEE Transactions on Nanotechnology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publisher DOI
Abstract
Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp2 and sp3 content into account when ...
Tetrahedral amorphous (ta-C) carbon-based memory devices have recently gained traction due to their good scalability and promising properties like nanosecond switching speeds. However, cycling endurance is still a key challenge. In this paper, we present a model that takes local fluctuations in sp2 and sp3 content into account when describing the conductivity of ta-C memory devices. We present a detailed study of the conductivity of ta-C memory devices ranging from ohmic behaviour at low electric fields to dielectric breakdown. The study consists of pulsed switching experiments and device-scale simulations, which allows us for the first time to provide insights into the local temperature distribution at the onset of memory switching.
Engineering
Faculty of Environment, Science and Economy
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