Role of Charge Traps in the Performance of Atomically Thin Transistors.
© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Transient currents in atomically thin MoTe2 field-effect transistors (FETs) are measured during cycles of pulses through the gate electrode. The curves of the transient currents are analyzed in light of a newly proposed model for charge-trapping dynamics that renders a time-dependent change in the threshold voltage as the dominant effect on the channel hysteretic behavior over emission currents from the charge traps. The proposed model is expected to be instrumental in understanding the fundamental physics that governs the performance of atomically thin FETs and is applicable to the entire class of atomically thin-based devices. Hence, the model is vital to the intelligent design of fast and highly efficient optoelectronic devices.
I.A. acknowledges financial support from the European Commission Marie Curie Individual Fellowships (Grant no. 701704). S.R. and M.F.C. acknowledge financial support from EPSRC (Grant nos. EP/J000396/1, EP/K017160/1, EP/K010050/1, EP/G036101/1, EP/M001024/1, and EP/M002438/1), from Royal Society international Exchanges Scheme 2016/R1 and from the Leverhulme Trust (Grant title “Quantum Drums” and “Room temperature quantum electronics”). N.J.T. and S.R. acknowledge DSTL grant scheme Sensing and Navigation using quantum 2.0 technologies. C.M. acknowledges the award of a Royal Society University Research Fellowship by the UK Royal Society, and the EPSRC-Royal Society Fellowship Engagement Grant EP/L003481/1.
This is the author accepted manuscript. The final version is freely available from Wiley via the DOI in this record.
First published: 15 March 2017
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