Photoconductivity of Few-Layer MoTe2
A photoconductivity study of few-layer MoTe2 in a field effect transistor (FET) configuration was performed to find the photoresponsivity and photocurrent response of the material. The mechanisms for MoTe2 with no applied gate voltage were found to be dominated by the photovoltaic effect, showing its potential for use in solar cells. Due to the band gap of MoTe2 being 1.1 eV, MoTe2 is a suitable photodetector for optical wavelengths and potentially the near infrared.
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