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dc.contributor.authorRodriguez-Hernandez, G
dc.contributor.authorHosseini, P
dc.contributor.authorRíos, C
dc.contributor.authorWright, CD
dc.contributor.authorBhaskaran, H
dc.date.accessioned2017-07-10T13:44:00Z
dc.date.issued2017-06-05
dc.description.abstractThe use of phase-change materials for a range of exciting new optoelectronic applications from artificial retinas to ultrahigh-resolution displays requires a thorough understanding of how these materials perform under a combination of optical and electrical stimuli. This study reports for the first time the complex link between the electronic and optical properties in real-world crossbar nanoscale devices constructed by confining a thin layer of Ge2Sb2Te5 between transparent indium tin oxide electrodes, forming an optical nanocavity. A novel proof-of-concept device that can be operated by a combination of optical and electrical stimuli is presented, leading the way for the development of further applications based on mixed-mode electro-optical operation.en_GB
dc.description.sponsorshipCONACYT. Grant Number: 215365. EPSRC. Grant Numbers: EP/J018783/1, EP/M015173/1, EP/M015130/1, EP/J018694/1en_GB
dc.identifier.citationFirst published: 5 June 2017en_GB
dc.identifier.doi10.1002/aelm.201700079
dc.identifier.urihttp://hdl.handle.net/10871/28384
dc.language.isoenen_GB
dc.publisherWileyen_GB
dc.rights© 2017 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.en_GB
dc.subjectnanodevicesen_GB
dc.subjectoptoelectronicsen_GB
dc.subjectphase-change materialsen_GB
dc.subjectphase-change photonicsen_GB
dc.titleMixed-Mode Electro-Optical Operation of Ge2Sb2Te5 Nanoscale Crossbar Devicesen_GB
dc.typeArticleen_GB
dc.date.available2017-07-10T13:44:00Z
dc.descriptionThis is the author accepted manuscript. The final version is freely available from Wiley via the DOI in this record.en_GB
dc.identifier.eissn2199-160X
dc.identifier.journalAdvanced Electronic Materialsen_GB


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