dc.contributor.author | Purnawirman | |
dc.contributor.author | Li, N | |
dc.contributor.author | Magden, ES | |
dc.contributor.author | Singh, G | |
dc.contributor.author | Singh, N | |
dc.contributor.author | Baldycheva, A | |
dc.contributor.author | Hosseini, ES | |
dc.contributor.author | Sun, J | |
dc.contributor.author | Moresco, M | |
dc.contributor.author | Adam, TN | |
dc.contributor.author | Leake, G | |
dc.contributor.author | Coolbaugh, D | |
dc.contributor.author | Bradley, JDB | |
dc.contributor.author | Watts, MR | |
dc.date.accessioned | 2017-07-25T10:45:06Z | |
dc.date.issued | 2017-06-08 | |
dc.description.abstract | We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx) segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infra-red wavelengths (950–2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS) cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of 0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (R-SHDI). | en_GB |
dc.description.sponsorship | Defense Advanced Research Projects Agency (DARPA) E-PHI (grant no. HR0011-12-2-0007) project. | en_GB |
dc.identifier.citation | Vol. 25, Issue 12, pp. 13705-13713 | en_GB |
dc.identifier.doi | 10.1364/OE.25.013705 | |
dc.identifier.uri | http://hdl.handle.net/10871/28618 | |
dc.language.iso | en | en_GB |
dc.publisher | Optical Society of America (OSA) | en_GB |
dc.rights.embargoreason | Under indefinite embargo due to publisher policy. | en_GB |
dc.title | Ultra-narrow-linewidth Al2O3:Er3 lasers with a wavelength-insensitive waveguide design on a wafer-scale silicon nitride platform | en_GB |
dc.type | Article | en_GB |
dc.identifier.issn | 1094-4087 | |
dc.description | This is the author accepted manuscript. The final version is freely available on open access from Optical Society of America via the DOI in this record. | en_GB |
dc.identifier.journal | Optics Express | en_GB |