dc.contributor.author | Li, N | |
dc.contributor.author | Purnawirman | |
dc.contributor.author | Magden, ES | |
dc.contributor.author | Singh, G | |
dc.contributor.author | Singh, N | |
dc.contributor.author | Baldycheva, A | |
dc.contributor.author | Hosseini, ES | |
dc.contributor.author | Sun, J | |
dc.contributor.author | Moresco, M | |
dc.contributor.author | Adam, TN | |
dc.contributor.author | Leake, G | |
dc.contributor.author | Coolbaugh, D | |
dc.contributor.author | Bradley, JDB | |
dc.contributor.author | Watts, MR | |
dc.date.accessioned | 2018-03-23T09:00:33Z | |
dc.date.issued | 2018-02-22 | |
dc.description.abstract | We report ultra-narrow-linewidth erbium-doped aluminum oxide (Al2O3:Er3+) distributed feedback (DFB) lasers with a
wavelength-insensitive silicon-compatible waveguide design. The waveguide consists of five silicon nitride (SiNx)
segments buried under silicon dioxide (SiO2) with a layer Al2O3:Er3+ deposited on top. This design has a high
confinement factor (> 85%) and a near perfect (> 98%) intensity overlap for an octave-spanning range across near infrared
wavelengths (950–2000 nm). We compare the performance of DFB lasers in discrete quarter phase shifted (QPS)
cavity and distributed phase shifted (DPS) cavity. Using QPS-DFB configuration, we obtain maximum output powers of
0.41 mW, 0.76 mW, and 0.47 mW at widely spaced wavelengths within both the C and L bands of the erbium gain
spectrum (1536 nm, 1566 nm, and 1596 nm). In a DPS cavity, we achieve an order of magnitude improvement in
maximum output power (5.43 mW) and a side mode suppression ratio (SMSR) of > 59.4 dB at an emission wavelength
of 1565 nm. We observe an ultra-narrow linewidth of ΔνDPS = 5.3 ± 0.3 kHz for the DPS-DFB laser, as compared to
ΔνQPS = 30.4 ± 1.1 kHz for the QPS-DFB laser, measured by a recirculating self-heterodyne delayed interferometer (RSHDI).
Even narrower linewidth can be achieved by mechanical stabilization of the setup, increasing the pump
absorption efficiency, increasing the output power, or enhancing the cavity Q. | en_GB |
dc.description.sponsorship | This work is supported by the Defense Advanced Research Projects Agency (DARPA) Microsystems Technology Office’s (MTO) E-PHI (HR0011-12-2-0007) project. N. Li acknowledges a fellowship from
the Agency of Science, Technology and Research (A*STAR), Singapore. | en_GB |
dc.identifier.citation | Volume 10537 | en_GB |
dc.identifier.doi | 10.1117/12.2288791 | |
dc.identifier.uri | http://hdl.handle.net/10871/32204 | |
dc.language.iso | en | en_GB |
dc.publisher | Society of Photo-optical Instrumentation Engineers | en_GB |
dc.rights | © (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only. | en_GB |
dc.subject | Erbium | en_GB |
dc.subject | lasers | en_GB |
dc.subject | silicon photonics | en_GB |
dc.subject | integrated optics | en_GB |
dc.subject | rare-earth-ion-doped devices | en_GB |
dc.title | Ultra-narrow-linewidth erbium-doped lasers on a silicon photonics platform | en_GB |
dc.type | Conference proceedings | en_GB |
dc.date.available | 2018-03-23T09:00:33Z | |
dc.identifier.issn | 1996-756X | |
dc.description | This is the final published version. Available from the publisher via the DOI in this record. | en_GB |
dc.description | Event: Silicon Photonics XIII; 1053712, SPIE OPTO, 2018, San Francisco, California, United States | en_GB |
dc.identifier.journal | Proceedings of SPIE | en_GB |