| dc.contributor.author | Nagareddy, VK | |
| dc.contributor.author | Ott, AK | |
| dc.contributor.author | Dou, C | |
| dc.contributor.author | Tsvetkova, T | |
| dc.contributor.author | Sandulov, M | |
| dc.contributor.author | Craciun, MF | |
| dc.contributor.author | Ferrari, AC | |
| dc.contributor.author | Wright, CD | |
| dc.date.accessioned | 2018-09-28T13:50:37Z | |
| dc.date.issued | 2018-05-11 | |
| dc.description.abstract | We report the effect of nitrogen implantation on the resistance switching of tetrahedral amorphous carbon (ta-C) films. Both unimplanted and implanted films show resistive switching, with a characteristic threshold voltage required to switch the films from the high-resistance to the low-resistance state. The switching voltages for the unimplanted films are between 7 and 10 V for ta-C films of thickness 15 to 40 nm. These are significantly reduced upon implantation by up to 60% when using an implantation dose ~3 × 1015cm−2. We attribute this to increased sp2bonding and clustering in the implanted films. This demonstrates the importance of sp2clustering for resistive-switching in sp3-rich ta-C films. | en_GB |
| dc.description.sponsorship | We acknowledge funding from EU FP7 project CareRAMM, FP7/2007-2013, grant agreement no309980 and EPSRC grants EP/K017160/1 and EP/M002438/1. Nitrogen implantation was carried out at the Surrey Ion Beam Centre, University of Surrey, UK. XPS measurements were done at the National EPSRC XPS User's Service (NEXUS) at Newcastle University, UK, an EPSRC Mid-Range Facility. | en_GB |
| dc.identifier.citation | Vol. 87, pp. 90 - 98 | en_GB |
| dc.identifier.doi | 10.1016/j.diamond.2018.05.005 | |
| dc.identifier.uri | http://hdl.handle.net/10871/34134 | |
| dc.language.iso | en | en_GB |
| dc.publisher | Elsevier | en_GB |
| dc.rights | © 2018 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY license (http://creativecommons.org/licenses/BY/4.0/) | en_GB |
| dc.title | The effect of nitrogen implantation on resistive switching of tetrahedral amorphous carbon films | en_GB |
| dc.type | Article | en_GB |
| dc.date.available | 2018-09-28T13:50:37Z | |
| dc.identifier.issn | 0925-9635 | |
| dc.description | This is the final version of the article. Available from Elsevier via the DOI in this record | en_GB |
| dc.identifier.journal | Diamond and Related Materials | en_GB |
