Efficient Photoelectrochemical Performance of Gamma Irradiated gC3N4 and its g-C3N4@BiVO4 Heterojunction for Solar Water Splitting

Abstract

Comprehensive experimental and density functional theory simulations have been performed for the enhanced photoelectrochemical performance of gamma irradiated g-C3N4 and its heterojunction with BiVO4. The structure and morphology of g-C3N4@BiVO4 as a heterojunction were analyzed and verified from the correlation of experimental and theoretical data. It is found that gamma radiations have changed the bonding structure of g-C3N4 which ultimately reduces the optical bandgap energy. Moreover, the performance of gamma-irradiated g-C3N4 is two-fold, compared to that of non-irradiated one; increases from 3.59 to 5.86 µAcm-2 at 1.23 V versus Ag/AgCl in 0.5 M Na2SO4 electrolyte solution (pH 7). Finally, it is observed that the performance of gamma irradiated g-C3N4 in g-C3N4@BiVO4 heterojunction increased from 0.53 mA cm-2 to 1.38 mA cm-2, compared to that of the non–irradiated one. In summary, it has been concluded that gamma-irradiated g-C3N4 and its heterojunction is potentially be applied in PEC solar water splitting.