dc.contributor.author | Farmakidis, N | |
dc.contributor.author | Youngblood, N | |
dc.contributor.author | Li, X | |
dc.contributor.author | Tan, J | |
dc.contributor.author | Swett, JL | |
dc.contributor.author | Cheng, Z | |
dc.contributor.author | Wright, CD | |
dc.contributor.author | Pernice, WHP | |
dc.contributor.author | Bhaskaran, H | |
dc.date.accessioned | 2019-12-04T15:56:06Z | |
dc.date.issued | 2019-11 | |
dc.description.abstract | Modern-day computers rely on electrical signaling for the processing and storage of data, which is bandwidth-limited and power hungry. This fact has long been realized in the communications field, where optical signaling is the norm. However, exploiting optical signaling in computing will require new on-chip devices that work seamlessly in both electrical and optical domains, without the need for repeated electrical-to-optical conversion. Phase-change devices can, in principle, provide such dual electrical-optical operation, but assimilating both functionalities into a single device has so far proved elusive owing to conflicting requirements of size-limited electrical switching and diffraction-limited optical response. Here, we combine plasmonics, photonics, and electronics to deliver an integrated phase-change memory cell that can be electrically or optically switched between binary or multilevel states. Crucially, this device can also be simultaneously read out both optically and electrically, offering a new strategy for merging computing and communications technologies. | en_GB |
dc.description.sponsorship | European Commission | en_GB |
dc.description.sponsorship | EPSRC | en_GB |
dc.description.sponsorship | Deutsche Forschungsgemeinschaft | en_GB |
dc.description.sponsorship | European Research Council | en_GB |
dc.description.sponsorship | European Union’s Horizon 2020 research and innovation program | en_GB |
dc.identifier.citation | Vol. 5, No 11 pp. eaaw2687 - eaaw2687 | en_GB |
dc.identifier.doi | 10.1126/sciadv.aaw2687 | |
dc.identifier.grantnumber | EP/J018694/1 | en_GB |
dc.identifier.grantnumber | EP/M015173/1 | en_GB |
dc.identifier.grantnumber | EP/M015130/1 | en_GB |
dc.identifier.grantnumber | PE 1832/2-1 | en_GB |
dc.identifier.grantnumber | 682675 | en_GB |
dc.identifier.grantnumber | 780848 | en_GB |
dc.identifier.uri | http://hdl.handle.net/10871/39964 | |
dc.language.iso | en | en_GB |
dc.publisher | American Association for the Advancement of Science (AAAS) | en_GB |
dc.rights | © 2019 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).
This is an open-access article distributed under the terms of the Creative Commons Attribution license, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. | en_GB |
dc.title | Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality | en_GB |
dc.type | Article | en_GB |
dc.date.available | 2019-12-04T15:56:06Z | |
dc.description | This is the final version. Available from American Association for the Advancement of Science via the DOI in this record. | en_GB |
dc.identifier.journal | Science Advances | en_GB |
dc.rights.uri | http://www.rioxx.net/licenses/all-rights-reserved | en_GB |
dcterms.dateAccepted | 2019-09-23 | |
exeter.funder | ::European Commission | en_GB |
rioxxterms.version | VoR | en_GB |
rioxxterms.licenseref.startdate | 2019-09-23 | |
rioxxterms.type | Journal Article/Review | en_GB |
refterms.dateFCD | 2019-12-04T15:47:57Z | |
refterms.versionFCD | VoR | |
refterms.dateFOA | 2019-12-04T15:56:13Z | |
refterms.panel | B | en_GB |