Exciton and electron-hole plasma formation dynamics in ZnO

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Exciton and electron-hole plasma formation dynamics in ZnO

Please use this identifier to cite or link to this item: http://hdl.handle.net/10036/32475


Title: Exciton and electron-hole plasma formation dynamics in ZnO
Author: Hendry, Euan
Koeberg, Mattijs
Bonn, Mischa
Citation: 76 (4), article 045214
Publisher: American Physical Society
Journal: Physical Review B
Date Issued: 2007
URI: http://hdl.handle.net/10036/32475
DOI: 10.1103/PhysRevB.76.045214
Links: http://dx.doi.org/10.1103/PhysRevB.76.045214 http://link.aps.org/abstract/PRB/v76/e045214
Abstract: We employ optical pump-THz probe measurements to study the formation of excitons and electron-hole plasmas following photogeneration of a hot electron-hole gas in the direct gap semiconductor zinc oxide. Below the Mott density, we directly observe the evolution of the hot electron-hole plasma into an insulating exciton gas in the 10 to 100 ps following photoexcitation. The temperature dependence of this process reveals that the rate determining step for exciton formation involves acoustic phonon emission. Above the Mott density, the density of the hot electron-hole plasma initially decreases very rapidly (~1.5 ps) through Auger annihilation until a stable plasma is formed close to the Mott density. In contrast to exciton formation, Auger annihilation is found to be independent of lattice temperature, occurring while the plasma is still hot.
Type: Article
Description: Euan Hendry, M. Koeberg, and M. Bonn, Physical Review B, Vol. 76, article 045214 (2007). "Copyright © 2007 by the American Physical Society."
Keywords: excitonssemiconductor plasmawide band gap semiconductorsII-VI semiconductorsphononszinc compoundsphotoconductivity
ISSN: 1098-01211550-235X

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