Spin polarization and barrier oxidation effects at the Co/alumina interface in magnetic tunnel junctions
Telling, N.D.; van der Laan, Gerrit; Ladak, S.; et al.Hicken, R.J.
Date: 2004
Journal
Applied Physics Letters
Publisher
American Institute of Physics
Publisher DOI
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Abstract
The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L2,3 absorption edges. It was found that the Co electronic structure near the Co∕alumina interface tended to that of cobalt oxide as the ...
The electronic structure and polarization in magnetic tunnel junctions prepared with varying degrees of barrier-layer oxidation have been studied using x-ray absorption spectroscopy across the Co L2,3 absorption edges. It was found that the Co electronic structure near the Co∕alumina interface tended to that of cobalt oxide as the barrier oxidation time was increased. However, the net Co 3d spin polarization, determined from x-ray magnetic circular dichroism, increased for moderate oxidation times compared to that obtained for an under-oxidized Co∕Al interface. It is proposed that the expected dilution of the measured polarization due to the formation of (room temperature) paramagnetic cobalt oxide, is offset by an increase in the Co 3d spin-polarization of the interface layer as the interface bonding changes from Co–Al to Co–O with increasing oxidation times.
Physics and Astronomy
Faculty of Environment, Science and Economy
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