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dc.contributor.authorBuchanan, J.D.R.en_GB
dc.contributor.authorHase, T.P.A.en_GB
dc.contributor.authorTanner, B.K.en_GB
dc.contributor.authorHughes, N.D.en_GB
dc.contributor.authorHicken, R.J.en_GB
dc.date.accessioned2013-01-24T15:12:48Zen_GB
dc.date.accessioned2013-03-20T13:14:23Z
dc.date.issued2002en_GB
dc.description.abstractThe barrier thickness in magnetic spin-dependent tunnel junctions with Al2O3 barriers has been measured using grazing incidence x-ray reflectivity and by fitting the tunneling current to the Simmons model. We have studied the effect of glow discharge oxidation time on the barrier structure, revealing a substantial increase in Al2O3 thickness with oxidation. The greater thickness of barrier measured using grazing incidence x-ray reflectivity compared with that obtained by fitting current density–voltage to the Simmons electron tunneling model suggests that electron tunneling is localized to specific regions across the barrier, where the thickness is reduced by fluctuations due to nonconformal roughness.en_GB
dc.identifier.citationVol. 81 (4), pp. 751 - 753en_GB
dc.identifier.doi10.1063/1.1496131en_GB
dc.identifier.urihttp://hdl.handle.net/10036/4201en_GB
dc.publisherAmerican Institute of Physicsen_GB
dc.relation.urlhttp://dx.doi.org/10.1063/1.1496131en_GB
dc.subjectcobalten_GB
dc.subjectPermalloyen_GB
dc.subjectaluminaen_GB
dc.subjectMIM structuresen_GB
dc.subjecttunnellingen_GB
dc.subjectmagnetoresistanceen_GB
dc.subjectelectron spin polarisationen_GB
dc.subjectX-ray reflectionen_GB
dc.subjectinsulating thin filmsen_GB
dc.subjectinterface roughnessen_GB
dc.subjectmagnetic multilayersen_GB
dc.subjectferromagnetic materialsen_GB
dc.titleDetermination of the Thickness of Al2O3 Barriers in Magnetic Tunnel Junctionsen_GB
dc.typeArticleen_GB
dc.date.available2013-01-24T15:12:48Zen_GB
dc.date.available2013-03-20T13:14:23Z
dc.identifier.issn0003-6951en_GB
dc.descriptionCopyright © 2002 American Institute of Physicsen_GB
dc.identifier.eissn1077-3118en_GB
dc.identifier.journalApplied Physics Lettersen_GB


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