A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

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A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage

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Title: A model for the phase-change process in GeSbTe thin films used for optical and electrical data storage
Author: Senkader, Semih
Aziz, Mustafa M.
Wright, C. David
Citation: Vol. 5069, pp. 98-104
Publisher: SPIE
Journal: Proceedings of SPIE
Date Issued: 2003
URI: http://hdl.handle.net/10036/47334
DOI: 10.1117/12.532526
Links: http://dx.doi.org/10.1117/12.532526
Abstract: We have developed a model to simulate the phase-change behavior of GeSbTe thin film alloys. Based on classical nucleation theory we described formation of crystalline clusters using chemical rate equations. Assuming that the phase-change proceeds by interactions of single GeSbTe molecules with growing or decaying crystalline clusters we used a set of differential equations to account for the population density changes of clusters. We defined reaction rates encountered in model equations by considering possible molecular processes during the phase-change process. To validate the model we simulated experiments taken from the literature. It can predict the kinetics of crystallization well, describe transient effectis correctly, and consider influecnes of substrates on crystallization successfully.
Type: Article
Description: Copyright © 2003 Society of Photo-Optical Instrumentation Engineers. This paper was published in Proceedings of SPIE Volume 5069, pp. 98-104 and is made available with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Keywords: GeSbTephase-changecrystallisation
ISSN: 0277-786X


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