Flexible Electronics Applications of Ge-rich and Selenium Substituted Phase-change Materials in Non-volatile Memories
Pady, J; Costa, J; Ramsdale, C; et al.Alkhalil, F; Craciun, MF; Wright, CD
Date: 18 September 2023
Conference paper
Publisher
E\PCOS
Abstract
The crystallization properties of Ge-rich GeSbTe (GST) and selenium substituted GeSbSeTe
(GSST) alloys are investigated and the materials’ applicability for use in flexible memory devices
is assessed. The electrical and structural properties of Ge-rich GST and GSST are measured as a
function of temperature, where the high temperature ...
The crystallization properties of Ge-rich GeSbTe (GST) and selenium substituted GeSbSeTe
(GSST) alloys are investigated and the materials’ applicability for use in flexible memory devices
is assessed. The electrical and structural properties of Ge-rich GST and GSST are measured as a
function of temperature, where the high temperature stability of the amorphous phase is
demonstrated. Finally the electrical switching of a Ge-rich flexible memory device is shown and
simulations of GSST undergoing phase switching in a memory architecture suitable for integration
into flexible electronics is demonstrated.
Engineering
Faculty of Environment, Science and Economy
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