Flexible Electronics Applications of Ge-rich and Selenium Substituted Phase-change Materials in Non-volatile Memories

Abstract

The crystallization properties of Ge-rich GeSbTe (GST) and selenium substituted GeSbSeTe (GSST) alloys are investigated and the materials’ applicability for use in flexible memory devices is assessed. The electrical and structural properties of Ge-rich GST and GSST are measured as a function of temperature, where the high temperature stability of the amorphous phase is demonstrated. Finally the electrical switching of a Ge-rich flexible memory device is shown and simulations of GSST undergoing phase switching in a memory architecture suitable for integration into flexible electronics is demonstrated.