Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes
Nash, Geoffrey R.
Applied Physics Letters
American Institute of Physics (AIP)
Efficiency droop in InSb/AlxIn1−xSb quantum-well light-emitting diodes has been investigated as a function of temperature for devices containing 20 nm, 40 nm, and 100 nm wide quantum well active regions. The amount of droop is greatest at low temperatures in device with the widest wells.
Copyright © 2013 American Institute of Physics
Vol. 102 (1), article 011127