Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes

dc.contributor.author	Nash, Geoffrey R.
dc.contributor.author	Mirza, B.I.
dc.date.accessioned	2014-04-01T14:31:27Z
dc.date.issued	2013-01-10
dc.description.abstract	Efficiency droop in InSb/AlxIn1−xSb quantum-well light-emitting diodes has been investigated as a function of temperature for devices containing 20 nm, 40 nm, and 100 nm wide quantum well active regions. The amount of droop is greatest at low temperatures in device with the widest wells.	en_GB
dc.identifier.citation	Vol. 102 (1), article 011127	en_GB
dc.identifier.doi	10.1063/1.4773182
dc.identifier.uri	http://hdl.handle.net/10871/14710
dc.language.iso	en	en_GB
dc.publisher	American Institute of Physics (AIP)	en_GB
dc.subject	Quantum wells	en_GB
dc.subject	Light emitting diodes	en_GB
dc.subject	III-V semiconductors	en_GB
dc.subject	Emission spectra	en_GB
dc.subject	Electric measurements	en_GB
dc.title	Efficiency droop in InSb/AlInSb quantum-well light-emitting diodes	en_GB
dc.type	Article	en_GB
dc.date.available	2014-04-01T14:31:27Z
dc.identifier.issn	0003-6951
dc.description	Copyright © 2013 American Institute of Physics	en_GB
dc.identifier.eissn	1077-3118
dc.identifier.journal	Applied Physics Letters	en_GB