Electron transport of WS2 transistors in a hexagonal boron nitride dielectric environment.
Bointon, Thomas H.
Craciun, Monica F.
Nature Publishing Group
This work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article’sCreative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, userswill need to obtain permission fromthe license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/
We present the first study of the intrinsic electrical properties of WS2 transistors fabricated with two different dielectric environments WS2 on SiO2 and WS2 on h-BN/SiO2, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS2 with various thicknesses from single- up to four-layers and over a wide temperature range from 300 K down to 4.2 K shows that disorder intrinsic to WS2 is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides.
Royal Society Travel Exchange Grant
Open Access Journal
Copyright: Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson, Monica Felicia Craciun & Saverio Russo
Vol. 4, Article 4967
Place of publication