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dc.contributor.authorWithers, Freddie
dc.contributor.authorBointon, Thomas H.
dc.contributor.authorHudson, David
dc.contributor.authorRusso, Saverio
dc.contributor.authorCraciun, Monica F.
dc.date.accessioned2014-07-04T10:14:10Z
dc.date.issued2014
dc.description.abstractWe present the first study of the intrinsic electrical properties of WS2 transistors fabricated with two different dielectric environments WS2 on SiO2 and WS2 on h-BN/SiO2, respectively. A comparative analysis of the electrical characteristics of multiple transistors fabricated from natural and synthetic WS2 with various thicknesses from single- up to four-layers and over a wide temperature range from 300 K down to 4.2 K shows that disorder intrinsic to WS2 is currently the limiting factor of the electrical properties of this material. These results shed light on the role played by extrinsic factors such as charge traps in the oxide dielectric thought to be the cause for the commonly observed small values of charge carrier mobility in transition metal dichalcogenides.en_GB
dc.description.sponsorshipEPSRCen_GB
dc.description.sponsorshipRoyal Society Travel Exchange Granten_GB
dc.identifier.citationVol. 4, Article 4967en_GB
dc.identifier.doi10.1038/srep04967
dc.identifier.grantnumberEP/J000396/1en_GB
dc.identifier.grantnumberEP/K010050/1en_GB
dc.identifier.urihttp://hdl.handle.net/10871/15141
dc.language.isoenen_GB
dc.publisherNature Publishing Groupen_GB
dc.relation.urlhttp://www.ncbi.nlm.nih.gov/pubmed/24829046en_GB
dc.relation.urlhttp://dx.doi.org/10.1038/srep04967en_GB
dc.rightsThis work is licensed under a Creative Commons Attribution 3.0 Unported License. The images in this article are included in the article’sCreative Commons license, unless indicated otherwise in the image credit; if the image is not included under the Creative Commons license, userswill need to obtain permission fromthe license holder in order to reproduce the image. To view a copy of this license, visit http://creativecommons.org/licenses/by/3.0/en_GB
dc.subjecttwo-dimensional materialsen_GB
dc.subjectelectronic devicesen_GB
dc.titleElectron transport of WS2 transistors in a hexagonal boron nitride dielectric environment.en_GB
dc.typeArticleen_GB
dc.date.available2014-07-04T10:14:10Z
dc.identifier.issn2045-2322
exeter.place-of-publicationEngland
dc.descriptionOpen Access Journalen_GB
dc.descriptionCopyright: Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson, Monica Felicia Craciun & Saverio Russoen_GB
dc.identifier.journalScientific Reportsen_GB


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