Critical current scaling in long diffusive graphene-based Josephson junctions
Ke, Chung-Ting; Borzenets, IV; Draelos, Anne W.; et al.Amet, Francois; Bomze, Yuriy; Jones, Gareth; Craciun, Monica F.; Russo, Saverio; Yamamoto, Michihisa; Tarucha, Seigo; Finkelstein, Gleb
Date: 7 July 2016
Journal
Nano Letters
Publisher
American Chemical Society
Publisher DOI
Abstract
We present transport measurements on long, diffusive, graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼9 μm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in these junctions ...
We present transport measurements on long, diffusive, graphene-based Josephson junctions. Several junctions are made on a single-domain crystal of CVD graphene and feature the same contact width of ∼9 μm but vary in length from 400 to 1000 nm. As the carrier density is tuned with the gate voltage, the critical current in these junctions ranges from a few nanoamperes up to more than 5 μA, while the Thouless energy, ETh, covers almost 2 orders of magnitude. Over much of this range, the product of the critical current and the normal resistance ICRN is found to scale linearly with ETh, as expected from theory. However, the value of the ratio ICRN/ETh is found to be 0.1–0.2, which much smaller than the predicted ∼10 for long diffusive SNS junctions.
Physics and Astronomy
Faculty of Environment, Science and Economy
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