| dc.contributor.author | Chambers, SA | |
| dc.contributor.author | Du, Y | |
| dc.contributor.author | Gu, M | |
| dc.contributor.author | Droubay, TC | |
| dc.contributor.author | Hepplestone, SP | |
| dc.contributor.author | Sushko, PV | |
| dc.date.accessioned | 2016-03-08T10:25:05Z | |
| dc.date.issued | 2015-05-13 | |
| dc.description.abstract | We show that despite very similar crystallographic properties and work function values in bulk Fe and Cr, epitaxial films of these metals on Nb:SrTiO3(001) exhibit completely different heterojunction electronic properties. The Cr/SrTiO3 interface is ohmic, whereas Fe/SrTiO3 forms a Schottky barrier with a barrier height of 0.50 eV. This difference arises because of variations in interface chemistry. In contrast to Cr [Chambers, S. A., Adv. Mater. 2013, 25, 4001.], in-diffused Fe exhibits a +2 oxidation state and occupies Ti sites in the perovskite lattice, resulting in negligible charge transfer to Ti, upward band bending, and Schottky barrier formation. The differences between Cr and Fe are understood by performing first-principles calculations of the energetics of defect formation, which corroborate experimental results. | en_GB |
| dc.description.sponsorship | This work was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award #10122. The work described was conducted in the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by DOE’s Office of Biological and Environmental Research and located at PNNL. PNNL is operated by Battelle for the DOE under Contract DE-AC05-76RLO1830. S.P.H. was supported by the EPSRC Grant No.EP/I009973/1. Access to the HECToR high-performance computing facility was made available via S.P.H. membership of the U.K.’s HPC Materials Chemistry Consortium, which was funded by EPSRC (EP/F067496). | en_GB |
| dc.identifier.citation | Vol. 27 (11), pp. 4093 - 4098 | en_GB |
| dc.identifier.doi | 10.1021/acs.chemmater.5b01118 | |
| dc.identifier.uri | http://hdl.handle.net/10871/20589 | |
| dc.language.iso | en | en_GB |
| dc.publisher | American Chemical Society | en_GB |
| dc.rights.embargoreason | Publisher policy | en_GB |
| dc.title | Dominance of interface chemistry over the bulk properties in determining the electronic structure of epitaxial metal/perovskite oxide heterojunctions | en_GB |
| dc.type | Article | en_GB |
| dc.identifier.issn | 0897-4756 | |
| dc.description | This is the author accepted manuscript. The final version is available from the American Chemical Society via the DOI in this record. | en_GB |
| dc.identifier.journal | Chemistry of Materials | en_GB |
