| dc.contributor.author | Diosdado, JAV | |
| dc.contributor.author | Ashwin, P | |
| dc.contributor.author | Kohary, KI | |
| dc.contributor.author | Wright, CD | |
| dc.date.accessioned | 2016-04-04T11:10:47Z | |
| dc.date.issued | 2013-06-10 | |
| dc.description.abstract | - | en_GB |
| dc.identifier.citation | Applied Physics Letters, Vol. 102, 236102 | en_GB |
| dc.identifier.doi | 10.1063/1.4809722 | |
| dc.identifier.uri | http://hdl.handle.net/10871/20933 | |
| dc.language.iso | en | en_GB |
| dc.publisher | American Institute of Physics | en_GB |
| dc.rights | This is the final version of the article. Available from the American Institute of Physics via the DOI in this record. | en_GB |
| dc.title | Response to "comment on 'Threshold switching via electric field induced crystallization in phase change memory devices'" [Appl. Phys. Lett. 102, 236101 (2012)] | en_GB |
| dc.type | Article | en_GB |
| dc.date.available | 2016-04-04T11:10:47Z | |
| dc.identifier.issn | 0003-6951 | |
| dc.description | Published | en_GB |
| dc.description | Note | en_GB |
| dc.description | Journal | en_GB |
| dc.identifier.journal | Applied Physics Letters | en_GB |
