Effect of metal intermixing on the Schottky barriers of Mo(100)/GaAs(100) interfaces
Hepplestone, SP; Sushko, PV
Date: 1 January 2014
Article
Journal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Publisher DOI
Abstract
The electronic and structural properties of Mo(100)/GaAs(100) interfaces and Mo diffusion into GaAs are explored using first principle calculations. Our results show that the interface undergoes substantial atomic rearrangement with respect to the bulk structures and the bilayer of the GaAs adjacent to the interface becomes conducting. ...
The electronic and structural properties of Mo(100)/GaAs(100) interfaces and Mo diffusion into GaAs are explored using first principle calculations. Our results show that the interface undergoes substantial atomic rearrangement with respect to the bulk structures and the bilayer of the GaAs adjacent to the interface becomes conducting. We study the n-type Schottky barrier height's dependence on Mo interdiffusion in the GaAs, with values ranging from ∼0.9eV to ∼1.39eV. This range is caused by the diffusants acting as additional n-type doping at the surface and their interaction with the metal-induced gap states.
Physics and Astronomy
Faculty of Environment, Science and Economy
Item views 0
Full item downloads 0