Multi-scale Simulations of Metal-Semiconductor Nanoscale Contacts
Aldegunde, M; Hepplestone, SP; Sushko, PV; et al.Kalna, K
Date: 13 October 2015
Article
Journal
Journal of Physics: Conference Series
Publisher
IOP Publishing: Conference Series
Publisher DOI
Abstract
An electron transport simulations via a metal-semiconductor interface is carried out using multi-scale approach by coupling ab-initio calculations with 3D finite element ensemble Monte Carlo technique. The density functional theory calculations of the Mo/GaAs (001) interface show electronic properties of semiconductor dramatically ...
An electron transport simulations via a metal-semiconductor interface is carried out using multi-scale approach by coupling ab-initio calculations with 3D finite element ensemble Monte Carlo technique. The density functional theory calculations of the Mo/GaAs (001) interface show electronic properties of semiconductor dramatically change close to the interface having a strong impact on the transport. Tunnelling barrier lowers and widens due to a band gap narrowing near the interface reducing resistivity by more than one order of magnitude: from 2.1 × 10-8Ω.cm2 to 4.7 × 10-10Ω.cm2. The dependence of electron effective mass from the distance to the interface also plays a role bringing resistivity to 7.9 × 10-10Ω.cm2.
Physics and Astronomy
Faculty of Environment, Science and Economy
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