Fast High-Responsivity Few-Layer MoTe2 Photodetectors
Octon, Tobias J.; Nagareddy, K; Russo, SR; et al.Craciun, MC; Wright, CD
Date: 16 August 2016
Article
Journal
Advanced Optical Materials
Publisher
Wiley
Publisher DOI
Abstract
The Transition Metal Dichalcogenide MoTe2 is fabricated via mechanical exfoliation into few-layer Field Effect Transistors (FETs) having a hole mobility of 2.04 V/cm2/s. Four-layer MoTe2 FETs show a high photoresponsivity of 6 A/W and a response time, at around 160 μs, over 100 times faster than previously reported for MoTe2. Few-layer ...
The Transition Metal Dichalcogenide MoTe2 is fabricated via mechanical exfoliation into few-layer Field Effect Transistors (FETs) having a hole mobility of 2.04 V/cm2/s. Four-layer MoTe2 FETs show a high photoresponsivity of 6 A/W and a response time, at around 160 μs, over 100 times faster than previously reported for MoTe2. Few-layer MoTe2 thus appears as a strong candidate for high speed and high sensitivity photodetection applications.
Engineering
Faculty of Environment, Science and Economy
Item views 0
Full item downloads 0