Fast High-Responsivity Few-Layer MoTe2 Photodetectors
Octon, Tobias J.
Advanced Optical Materials
© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
The Transition Metal Dichalcogenide MoTe2 is fabricated via mechanical exfoliation into few-layer Field Effect Transistors (FETs) having a hole mobility of 2.04 V/cm2/s. Four-layer MoTe2 FETs show a high photoresponsivity of 6 A/W and a response time, at around 160 μs, over 100 times faster than previously reported for MoTe2. Few-layer MoTe2 thus appears as a strong candidate for high speed and high sensitivity photodetection applications.
CDW would like to acknowledge funding via EPSRC grants EP/M015173/1 and EP/M015130/1. TJO acknowledges funding from the EPSRC Centre for Doctoral Training in Metamaterials, grant number EP/L015331/1
This is the author accepted manuscript. The final version is available from Wiley via the DOI in this record.
Published online 16 August 2016