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dc.contributor.authorOcton, Tobias J.
dc.contributor.authorNagareddy, K
dc.contributor.authorRusso, SR
dc.contributor.authorCraciun, MC
dc.contributor.authorWright, CD
dc.date.accessioned2016-07-29T15:00:37Z
dc.date.issued2016-08-16
dc.description.abstractThe Transition Metal Dichalcogenide MoTe2 is fabricated via mechanical exfoliation into few-layer Field Effect Transistors (FETs) having a hole mobility of 2.04 V/cm2/s. Four-layer MoTe2 FETs show a high photoresponsivity of 6 A/W and a response time, at around 160 μs, over 100 times faster than previously reported for MoTe2. Few-layer MoTe2 thus appears as a strong candidate for high speed and high sensitivity photodetection applications.en_GB
dc.description.sponsorshipCDW would like to acknowledge funding via EPSRC grants EP/M015173/1 and EP/M015130/1. TJO acknowledges funding from the EPSRC Centre for Doctoral Training in Metamaterials, grant number EP/L015331/1en_GB
dc.identifier.citationPublished online 16 August 2016
dc.identifier.doi10.1002/adom.201600290
dc.identifier.urihttp://hdl.handle.net/10871/22793
dc.language.isoenen_GB
dc.publisherWileyen_GB
dc.rights© 2016 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
dc.subjectmolybdenum ditellurideen_GB
dc.subjectfield effect transistoren_GB
dc.subjectphotodetectionen_GB
dc.subject2D materialsen_GB
dc.subjectfast photo-responseen_GB
dc.titleFast High-Responsivity Few-Layer MoTe2 Photodetectorsen_GB
dc.typeArticleen_GB
dc.identifier.issn2195-1071
dc.descriptionThis is the author accepted manuscript. The final version is available from Wiley via the DOI in this record.
dc.identifier.journalAdvanced Optical Materialsen_GB


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