Electron properties of fluorinated single-layer graphene transistors
Withers, F; Dubois, M; Savchenko, AK
Date: 6 August 2010
Article
Journal
Physical Review B
Publisher
American Physical Society
Publisher DOI
Abstract
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates ...
We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states.
Engineering
Faculty of Environment, Science and Economy
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