| dc.contributor.author | Withers, F | |
| dc.contributor.author | Dubois, M | |
| dc.contributor.author | Savchenko, AK | |
| dc.date.accessioned | 2016-10-24T11:37:15Z | |
| dc.date.issued | 2010-08-06 | |
| dc.description.abstract | We have fabricated transistor structures using fluorinated single-layer graphene flakes and studied their electronic properties at different temperatures. Compared with pristine graphene, fluorinated graphene has very large and strongly temperature dependent resistance in the electro-neutrality region. We show that fluorination creates a mobility gap in graphene's spectrum where electron transport takes place via localised electron states. | en_GB |
| dc.description.sponsorship | We are grateful to A. V. Shytov for useful discussions and
A. A. Kozikov for help with measurements, and to EPSRC
for funding. | en_GB |
| dc.identifier.citation | Vol. 82, article 073403 | en_GB |
| dc.identifier.doi | 10.1103/PhysRevB.82.073403 | |
| dc.identifier.uri | http://hdl.handle.net/10871/24052 | |
| dc.language.iso | en | en_GB |
| dc.publisher | American Physical Society | en_GB |
| dc.title | Electron properties of fluorinated single-layer graphene transistors | en_GB |
| dc.type | Article | en_GB |
| dc.date.available | 2016-10-24T11:37:15Z | |
| dc.identifier.issn | 2469-9950 | |
| pubs.declined | 2016-10-21T10:26:44.206+0100 | |
| dc.description | This is the author accepted manuscript. The final version is available from the publisher via the DOI in this record. | en_GB |
| dc.identifier.journal | Physical Review B | en_GB |
