Show simple item record

dc.contributor.authorPlaut, AS
dc.contributor.authorWurstbauerb, U
dc.contributor.authorWang, S
dc.contributor.authorLevy, AL
dc.contributor.authorFernandes dos Santos, L
dc.contributor.authorWang, L
dc.contributor.authorPfeiffer, LN
dc.contributor.authorWatanabe, K
dc.contributor.authorTaniguchi, T
dc.contributor.authorDean, CR
dc.contributor.authorHone, J
dc.contributor.authorPinczuk, A
dc.contributor.authorGarcia, JM
dc.date.accessioned2017-01-03T14:38:14Z
dc.date.issued2016-12-18
dc.description.abstractWe demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500◦C – 1000◦C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 µm to 100 µm, thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 µm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ∼950◦C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.en_GB
dc.description.sponsorshipThis work is supported by ONR (N000140610138 and Graphene MURI), AFOSR (FA9550-11-1-0010), EFRC Center for Re-Defining Photovoltaic Efficiency through Molecule Scale Control (award DE-SC0001085), NSF (CHE-0641523), NYSTAR and Spanish Government (AIC-B-2011-0806, MAT2014-54231, MAT2015-67021-R). S.W. and A.P. were supported by the US Department of Energy Office of Science, Division of Materials Science and Engineering (award DE-SC0010695).en_GB
dc.identifier.citationVol. 114, pp. 579 - 584en_GB
dc.identifier.doi10.1016/j.carbon.2016.12.031
dc.identifier.urihttp://hdl.handle.net/10871/25029
dc.language.isoenen_GB
dc.publisherElsevieren_GB
dc.rights.embargoreasonPublisher Policyen_GB
dc.rights© 2016 Elsevier Ltd. All rights reserved.en_GB
dc.titleExceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitrideen_GB
dc.typeArticleen_GB
dc.identifier.issn0008-6223
dc.descriptionThis is the author accepted manuscript. The final version is available from the publisher via the DOI in this record.en_GB
dc.descriptionAvailable online 18 December 2016en_GB
dc.identifier.journalCarbonen_GB


Files in this item

This item appears in the following Collection(s)

Show simple item record