Joule heating effects in nanoscale carbon-based memory devices
Bachmann, TA; Alexeev, AM; Koelmans, WW; et al.Zipoli, F; Ott, AK; Dou, C; Ferrari, AC; Nagareddy, VK; Craciun, MF; Jonnalagadda, VP; Curioni, A; Sebastian, A; Eleftheriou, E; Wright, CD
Date: 8 December 2016
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publisher DOI
Abstract
One of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers a very good scalability, data retention and sub-5ns switching [2], [3]. Amorphous carbon memory devices can be electrically and optically ...
One of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers a very good scalability, data retention and sub-5ns switching [2], [3]. Amorphous carbon memory devices can be electrically and optically switched from a high resistance state (HRS) to a low resistance state (LRS) [4]. The electrical conduction in the LRS is thought to be through sp2 clusters that form a conductive filament [4].
Engineering
Faculty of Environment, Science and Economy
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