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Joule heating effects in nanoscale carbon-based memory devices

dc.contributor.authorBachmann, TA
dc.contributor.authorAlexeev, AM
dc.contributor.authorKoelmans, WW
dc.contributor.authorZipoli, F
dc.contributor.authorOtt, AK
dc.contributor.authorDou, C
dc.contributor.authorFerrari, AC
dc.contributor.authorNagareddy, VK
dc.contributor.authorCraciun, MF
dc.contributor.authorJonnalagadda, VP
dc.contributor.authorCurioni, A
dc.contributor.authorSebastian, A
dc.contributor.authorEleftheriou, E
dc.contributor.authorWright, CD
dc.date.accessioned2017-05-16T08:53:44Z
dc.date.issued2016-12-08
dc.description.abstractOne of the emerging candidates to bridge the gap between fast but volatile DRAM and non-volatile but slow storage devices is tetrahedral amorphous carbon (ta-C) based memory [1]-[3]. This offers a very good scalability, data retention and sub-5ns switching [2], [3]. Amorphous carbon memory devices can be electrically and optically switched from a high resistance state (HRS) to a low resistance state (LRS) [4]. The electrical conduction in the LRS is thought to be through sp2 clusters that form a conductive filament [4].en_GB
dc.description.sponsorshipThis work was funded by the EU research & innovation project CareRAMM, no. 309980en_GB
dc.identifier.citation2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 9-12 October 2016, Toulouse, Franceen_GB
dc.identifier.doi10.1109/NMDC.2016.7777081
dc.identifier.urihttp://hdl.handle.net/10871/27534
dc.language.isoenen_GB
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_GB
dc.rights© 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other worksen_GB
dc.subjecttemperature distributionen_GB
dc.subjectamorphous semiconductorsen_GB
dc.subjectcarbonen_GB
dc.subjectelectric fieldsen_GB
dc.subjectelectrical conductivityen_GB
dc.subjectresistive RAMen_GB
dc.titleJoule heating effects in nanoscale carbon-based memory devicesen_GB
dc.typeConference paperen_GB
dc.date.available2017-05-16T08:53:44Z
dc.identifier.isbn9781509043521
dc.descriptionThis is the author accepted manuscript. The final version is available from IEEE via the DOI in this record.en_GB


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